| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an FET can be improved in performance by introducing a high-dielectric gate insulating film or adopting a distorted Si channel, but it is hard to obtain a gate insulating extremely thin film, and a method of forming the distorted Si channel is complicated to cause yield reduction and a cost increase. SOLUTION: The field effect transistor comprises a channel region formed on a semiconductor substrate, a gate insulating film of a crystalline metallic oxide which is formed on the channel region and different in lattice spacing from the semiconductor substrate, a gate electrode of conductive metal oxynitride formed on the gate insulating film, and source/drain regions formed at the side of the channel region. The conductive metal oxynitride is formed, the lattice spacing of the metal oxynitride is controlled whereby a high-dielectric gate insulating film is formed, and EOT reduction and the formation of the distorted Si channel are conducted to improve the FET in characteristics. The FET capable of markedly simplifying its manufacturing process and its manufacturing method is provided. COPYRIGHT: (C)2005,JPO&NCIPI
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