发明名称 Semiconductor device with high speed switching of test modes
摘要 A semiconductor device includes a first terminal which receives a signal within a predetermined potential range in a first operation mode, and receives a potential higher above the predetermined potential range in a second operation mode, a high potential detection circuit which is connected to the first terminal, and detects the high potential to generate a high potential detection signal, a second terminal which receives a command signal, a latch circuit which latches the command signal supplied to the second terminal in response to the high potential detection signal, and a third terminal which resets the latch circuit in response to a signal within the predetermined potential range supplied from an exterior of the device.
申请公布号 US6870383(B2) 申请公布日期 2005.03.22
申请号 US20020201002 申请日期 2002.07.24
申请人 FUJITSU LIMITED 发明人 KITAZAKI KAZUHIRO
分类号 G01R31/28;G01R31/317;G01R31/3185;G11C29/14;G11C29/46;(IPC1-7):G01R31/28 主分类号 G01R31/28
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