发明名称 Power-up circuit
摘要 A power-up circuit comprises a first PMOS transistor connected between the power supply and a first node, wherein a gate terminal of the first PMOS transistor is connected to the ground, a first voltage divider for dividing the power upon a power up, a first NMOS transistor driven an output of the first voltage divider upon a power up and connected between the first node and the ground, an inverter having a plurality of PMOS transistors connected between the power supply and a second node, in which gate electrodes of the plurality of inverter are connected from each other and a second NMOS transistor connected between the second node and the ground and gate of the second NMOS transistor is connected to the plurality of the PMOS transistors, thereby inverting the potential of the first node, and a third NMOS transistor connected between the first node and the ground, wherein the third NMOS transistor is turned on by an output of the inverter, thereby preventing shifting faster than the potential of the first node.
申请公布号 US6870408(B2) 申请公布日期 2005.03.22
申请号 US20040788178 申请日期 2004.02.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM KYUNG WHAN
分类号 H03K19/00;H03K17/22;(IPC1-7):H03L7/00 主分类号 H03K19/00
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