发明名称 |
Method and device for characterizing a CMOS logic cell to be produced in a technology of the partially depleted silicon-on-insulator type |
摘要 |
A method for characterizing a CMOS logic cell of the partially depleted silicon-on-insulator type (PD-SOI) may include modeling the logic cell and determining internal potentials of transistors of the cell in a dynamic equilibrium state based upon a functional simulation of the modeled cell. This may be done using a binary stimulation signal having an initial logic value. The dynamic equilibrium state may be based upon a cancellation, to within a precision error, of the sum of the squares of variations in the quantities of charge in floating substrates of the transistors taken over a period of two successive transitions of the stimulation signal.
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申请公布号 |
US6871330(B2) |
申请公布日期 |
2005.03.22 |
申请号 |
US20030447776 |
申请日期 |
2003.05.29 |
申请人 |
STMICROELECTRONICS SA |
发明人 |
FLATRESSE PHILIPPE;CASU MARIO |
分类号 |
G06F17/50;(IPC1-7):G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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