发明名称 |
Semiconductor device having groove and method of fabricating the same |
摘要 |
A method for forming a plurality of grooves of a semiconductor device having of a plurality of MOS transistors is provided. A plurality of photoresist patterns are formed on a semiconductor substrate. Ions are implanted on a portion of the semiconductor substrate using the plurality of photoresist patterns as a mask. The plurality of photoresist patterns are removed. An oxide layer is formed on the semiconductor substrate having the implanted ions by thermal oxidation. The plurality of grooves are formed on the semiconductor substrate by removing the oxide layer.
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申请公布号 |
US6869891(B2) |
申请公布日期 |
2005.03.22 |
申请号 |
US20020127625 |
申请日期 |
2002.04.22 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD |
发明人 |
SON NAK-JIN |
分类号 |
H01L21/334;H01L21/265;H01L21/302;H01L21/336;H01L21/762;H01L21/8234;H01L29/78;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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