| 摘要 |
A photo diode structure and a manufacturing method thereof are provided to reduce leakage current and to improve remarkably the lifetime by forming an ion-implanted layer in an electric field controlling layer. A first conductive type buffer layer(102,103) is formed on a substrate(101). An amplification layer(104) of a superlattice structure is formed on the first conductive type buffer layer. A second conductive type electric field controlling layer(105) is formed on the amplification layer. A second conductive type ion-implanted layer(106) is formed in the electric field controlling layer. A second conductive type light absorbing layer(107) is formed on the electric field controlling layer. A second conductive type buffer layer(108) is formed on the light absorbing layer. A first electrode(111) is electrically connected with the second conductive type buffer layer. A second electrode(112) is electrically connected with the first conductive type buffer layer.
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