| 摘要 |
A method for manufacturing a SiC substrate includes a polishing step of polishing the surface of a plate-shaped SiC material by moving a polishing pad, obtained by applying an abrasive to a pad, relative to the surface of the SiC material in a state where the polishing pad is in contact with the SiC material, and the abrasive contains colloidal silica and a dispersion medium in which the colloidal silica is dispersed and the abrasive has a pH of 4 to 9. Thus, it is possible to suppress processing damage and cracks while alleviating the burden on a polishing apparatus or on the environment. Consequently, a SiC substrate with a small surface roughness and high reliability can be manufactured.
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