发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that a photomask is required at every form and every process, that much cost and time are required for correspondence of small quantity many forms and a sudden change of a chip size, and that production efficiency is not good although photolithography is main in patterning of window formation in a manufacturing method of a mesa-type semiconductor device. SOLUTION: Selective diffusion formation of dispersing agent application by a nozzle system, pattern formation of a resist material and selective implantation formation of a passivation material are performed. Thus, production man-day is improved and the chip size is easily changed. Consequently, productivity improves. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005072120(A) 申请公布日期 2005.03.17
申请号 JP20030297126 申请日期 2003.08.21
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOSHIKAWA JUN;NAKAMURA HIDEKAZU
分类号 H01L21/331;H01L21/225;H01L29/73;(IPC1-7):H01L21/225 主分类号 H01L21/331
代理机构 代理人
主权项
地址
您可能感兴趣的专利