| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a small and low power-consumption far-infrared light emitting device which is capable of emitting far-infrared light and has a wavelength variable function. <P>SOLUTION: The far-infrared light emitting device has, on a two-dimensional electron system 4 formed in a solid material such as Si, GaAs, or the like, a disk-like source electrode 5, an annular gate electrode 6 which is formed outside the source electrode 5 and has a cutout 6a in part of the annulus ring, a first gate electrode 7 formed at a given distance away from the cutout 6a outside the gate electrode 6, and a drain electrode 8 formed further outside the first gate electrode 7. The far-infrared light emitting device 1 is made into a quantum hall state of a Landau level filling rate of 4. By applying voltage to the first gate electrode 7 to set a Landau level filling rate below the first gate electrode 7 to 2 and by adjusting a potential difference between the source electrode 5 and the drain electrode 8, a difference in energy between a lower Landau level 9a and an upper Landau level 9b is made to become a chemical potential difference the same as or above Landau level energy (cyclotron energy). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
