METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device is provided to polish selectively an SOG(Spin On Glass) layer alone without damage of SiO2 layer by using a predetermined slurry containing CeO and a cationic surfactant. An SiO2 layer(3) is deposited on a substrate(1) with metal line patterns(2). An SOG layer(4) is coated on the entire surface of the resultant structure. The SOG layer is polished by performing CMP(Chemical Mechanical Polishing) using a predetermined slurry containing CeO and a cationic surfactant. The SiO2 layer is a TEOS(Tetra Ethyl Ortho Silicate) layer.