| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon seed crystal which can prevent the occurrence of dislocation in a single crystal growing in drawing up a silicon single crystal by Czochralski method; and a production method for a single crystal whereby the productivity of a large-diameter high-weight single crystal ingot is enhanced by forming a thick and short neck without dislocation by using the seed crystal. SOLUTION: By using a silicon single crystal containing no vacancy-redundant region, a neck consisting of a silicon single crystal containing no vacancy-redundant region is grown so as to have a diameter smaller than or the same as that of the contact surface of the silicon single crystal contacting a raw material silicon melt. After necking is performed so that the length L of the neck satisfies the expression: L≥d×(cotψ) (wherein d is the length of the diameter or diagonal of the contact surface of the raw material single crystal; andψis the angle of the propagation direction of dislocation and the growth direction of neck), the diameter is increased to grow the silicon single crystal. COPYRIGHT: (C)2005,JPO&NCIPI
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