| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for use under a light source of ≥100 nm and <200 nm, preferably an exposure light source of F<SB>2</SB>excimer laser light (157 nm), and, to be concrete, provide a positive resist composition sharply improved in PED stability, shortening performance and sensitivity. <P>SOLUTION: The positive resist composition contains (A) a resin which is insoluble or slightly soluble in an alkali developer but becomes soluble in an alkali developer by the action of an acid and has at least one repeating unit containing a specified group having a fluorine atom, (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation, and (C) a specified aromatic compound. A pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
