| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a highly reliable semiconductor device. SOLUTION: The method of manufacturing the semiconductor device includes a step of forming a first SiO<SB>x</SB>N<SB>y</SB>film on a glass substrate, a step of forming an island-like semiconductor layer on the SiO<SB>x</SB>N<SB>y</SB>film, and a step of forming a second SiO<SB>x</SB>N<SB>y</SB>film to cover the island-like semiconductor layer. The method also includes a step of forming a gate electrode on the second SiO<SB>x</SB>N<SB>y</SB>film, a step of forming a mask having a broader width than the gate electrode has on the gate electrode, and a step of injecting boron or phosphorus into the island-like semiconductor layer through the mask. In addition, the method also includes a step of injecting boron or phosphorus into the island-like semiconductor layer by using the gate electrode as a mask after the mask is removed. COPYRIGHT: (C)2005,JPO&NCIPI
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