| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor-device manufacturing method and a semiconductor device wherein the high-temperature condition and the vacuum condition of the method can be relaxed and the manufacture of the device can be facilitated. SOLUTION: In a through-wiring forming process, each through-wiring 13 is formed in the thickness direction A of a semiconductor substrate 12. In an insulator applying process, an insulator made of an insulator 14 is applied to a first surface 12a of the semiconductor substrate 12. In a first heating process, the insulator 14 and the semiconductor substrate 12 are pre-baked. In a conductive-paste applying process, a conductive paste 15 is applied to the surface of the insulator 14. In a second heating process, the hard-baking of the insulator 14 and the sintering of the conductive paste 15 are performed nearly concurrently. COPYRIGHT: (C)2005,JPO&NCIPI
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