| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for increasing an emitter peripheral length and achieving a low saturation voltage VCE (sat) and a large current capacity by forming the junction section in a square wave shape, triangular wave shape, or sinusoidal wave shape in the semiconductor device, where the bottom face and the side face of an emitter region 4 are surrounded by a base region 3. SOLUTION: In the semiconductor device, the base region 3, the emitter region 4, and a collector region are provided in a semiconductor substrate, the base electrode is connected to the base region on one surface of the semiconductor substrate, an emitter electrode is connected to the emitter region, the collector region is connected to the collector electrode provided on the other main surface of the semiconductor substrate, and the bottom face and the side face of the emitter region are surrounded by the base region. In the semiconductor device, the junction section between the base region and the emitter region is set to be in a square wave shape, triangular wave shape, or sinusoidal wave shape in a plan view. COPYRIGHT: (C)2005,JPO&NCIPI
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