发明名称 Semiconductor apparatus and method for fabricating the same
摘要 A semiconductor apparatus includes a semiconductor integrated circuit including a conductive pattern; an insulating layer which is formed on the semiconductor integrated circuit to forms a plurality of base members having uneven heights; an opening which is formed through the insulating layer to expose a part of the conductive pattern; and a conductive layer which is formed on the insulating layer and the opening, the conductive layer is extending from the exposed portion of the conductive pattern to the top surface of the highest base member. An electrode is composed of the insulating layer, the opening and the conductive layer.
申请公布号 US2005059200(A1) 申请公布日期 2005.03.17
申请号 US20040957620 申请日期 2004.10.05
申请人 OHSUMI TAKASHI 发明人 OHSUMI TAKASHI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/485;(IPC1-7):H01L21/00 主分类号 H01L23/52
代理机构 代理人
主权项
地址