发明名称 Transparent amorphous carbon structure in semiconductor devices
摘要 A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.
申请公布号 US2005059262(A1) 申请公布日期 2005.03.17
申请号 US20030661379 申请日期 2003.09.12
申请人 YIN ZHIPING;LI WEIMIN 发明人 YIN ZHIPING;LI WEIMIN
分类号 H01L21/314;(IPC1-7):H01L21/31 主分类号 H01L21/314
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