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发明名称
用于微加工结晶材料之蚀刻方法以及由该方法制造之装置
摘要
总体而言,本发明系关于微加工技术。特定而言,本发明系关于一种组合方向性离子蚀刻与非等向性湿蚀刻之方法以及藉该方法制造之装置和结构。本发明特别可应用在矽的微加工上并且提供将结晶平面与垂直乾蚀刻平面组合在同一结构中之构造。
申请公布号
TW200510242
申请公布日期
2005.03.16
申请号
TW093114390
申请日期
2004.05.21
申请人
罗门哈斯电子材料有限公司
发明人
史汀柏格
分类号
B81C1/00
主分类号
B81C1/00
代理机构
代理人
洪武雄;陈昭诚
主权项
地址
美国
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