| 摘要 |
The present invention provides a method for fabricating a semiconductor device with use of an ArF light source capable of minimizing deformations of a photoresist pattern for ArF during an etching process. Also, when forming the pattern, C5F8 gas is used at a main etching step to compensate etch tolerance of the photoresist for ArF. By controlling process recipe properly, it is possible to minimize pattern deformations as simultaneously as to form a micronized pattern. To compensate the etch tolerance of the photoresist for ArF weaker than that of a photoresist for KrF, the main etching step is divided into three sub-steps, thereby providing a method for minimizing the pattern deformations when duplicating the pattern.
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