| 摘要 |
PROBLEM TO BE SOLVED: To provide a film depositing means for depositing a silicon oxynitride (SiON) film of high quality by preventing the film from becoming irregular in thickness, deteriorating in film quality, and varying in the atomic compositional ratio of oxygen (O) to nitrogen (N) due to the high reactivity of oxygen (O<SB>2</SB>) against silane (SiH<SB>4</SB>), in a process of depositing a silicon oxynitride (SiON) film using silane (SiH<SB>4</SB>), oxygen (O<SB>2</SB>), and nitrogen (N<SB>2</SB>) as materials. SOLUTION: Silane (SiH<SB>4</SB>) and nitrogen (N<SB>2</SB>) are introduced into a vacuum chamber to generate plasma for depositing a silicon nitride (SiN) film, the vacuum chamber is exhausted, silane (SiH<SB>4</SB>) is completely purged from the piping, plasma is generated while oxygen (O<SB>2</SB>) is introduced, oxygen (O<SB>2</SB>) is implanted into the silicon nitride (SiN) film, and the silicon nitride (SiN) film is modified into a silicon oxynitride (SiON) film. COPYRIGHT: (C)2005,JPO&NCIPI
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