METHOD OF ANNEALING SUBSTRATE FOR LIQUID CRYSTAL OR FOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an annealing method which allows the manufacture of a high-performance liquid crystal or semiconductor device by easily reducing an amount of particles attaching to the surface of a substrate during annealing, while preventing problems in a wet treatment to be conducted after annealing, when a liquid crystal substrate which is such that a polysilicon or amorphous silicon thin film is formed on a transparent plate made of glass or the like, and which is to be used for a liquid crystal display or a wafer made of silicon or the like to be used for semiconductor manufacturing (hereinafter called "substrate") is stored in a container that can be sealed up and is given high-temperature annealing. SOLUTION: The substrate for liquid crystal or for semiconductor is stored in the container which can be sealed up. The substrate is annealed at a high temperature in such a posture that it is inclined at a certain angle from a state placed horizontally with its front face upside. COPYRIGHT: (C)2005,JPO&NCIPI