| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic discharging protective element which is formed on an SOI substrate and the holding current of which can be set to a high value while the device maintains high protecting performance by reducing the base resistances of NPN and PNP bipolar transistors contained in an SCR. SOLUTION: An n-type well 6 and a p-type well 7 are formed in the silicon layer 4 of the SOI substrate 1 and pluralities of p<SP>+</SP>-type diffusion regions 9 (anodes) and n<SP>+</SP>-type diffusion regions 10 (base electrodes) are alternately arranged on the surface of the n-type well 6. In addition, pluralities of n<SP>+</SP>-type diffusion regions 13 (cathodes) and p<SP>+</SP>-type diffusion regions 14 (base electrodes) are alternately arranged on the surface of the p-type well 7. Moreover, a belt-like n<SP>-</SP>-type diffusion region 12 is formed on the surface of the n-type well 6 so as to connect all n<SP>+</SP>-type diffusion regions 10 to each other and a belt-like p<SP>-</SP>-type diffusion region 15 is formed on the surface of the p-type well 7 so as to connect all p<SP>+</SP>-type diffusion regions 14 to each other. COPYRIGHT: (C)2005,JPO&NCIPI
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