Sense amplifier power-gating technique for integrated circuit memory devices and those devices incorporating embedded dynamic random access memory (DRAM)

摘要

A sense amplifier power-gating circuit and method is disclosed which is of particular utility with respect to DRAM devices, or those incorporating embedded DRAM, and having a power-down (or Sleep) mode of operation. In accordance with a particular technique of the present invention, the local sense amplifier driver transistors serve a dual purpose as both driver and power gate transistors thereby obviating the need for large, distinct power-gating devices. This serves to minimize on-chip area requirements while not degrading sensing speed as in conventional approaches.