TRANSISTOR WITH ASYMMETRICALLY FORMED SOURCE AND DRAIN REGION IN SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: A transistor of a semiconductor device and a forming method thereof are provided to restrain punch through in an adjacent transistor by forming asymmetrically a source and drain region in a semiconductor substrate. CONSTITUTION: A source and drain junction region(33) are formed in a semiconductor substrate(11). At this time, one junction region is higher than the other junction region. A tilted channel region(21) is formed between the source and drain junction region. A gate electrode(25) is formed on the tilted channel region. The source and drain junction regions are high concentration impurity junction regions.