Heterojunction bipolar transistor structure

摘要

A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0<=x<=1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0<=y, z<=1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.