发明名称 THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND MANUFACTURING METHOD FOR DISPLAY DEVICE
摘要 <p>The present invention provides a thin film transistor that can be manufactured at lower cost and at higher yield by simplifying a manufacturing process, a manufacturing method thereof, and a manufacturing method of a display device using the thin film transistor. According to this invention, a pattern used in a pattering process is formed by using a droplet discharging method. The pattern is formed by selectively discharging a composition comprising an organic resin. By using the pattern, an electrically conductive material, an insulator or semiconductor constituting a semiconductor element, are patterned into a desired shape by a simple process.</p>
申请公布号 WO2005022262(A1) 申请公布日期 2005.03.10
申请号 WO2004JP12598 申请日期 2004.08.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;MAEKAWA, SHINJI;FUKUCHI, KUNIHIKO;FUJII, GEN;MURANAKA, KOJI;NAKAMURA, OSAMU 发明人 MAEKAWA, SHINJI;FUKUCHI, KUNIHIKO;FUJII, GEN;MURANAKA, KOJI;NAKAMURA, OSAMU
分类号 H01L21/336;H01L21/77;H01L27/12;(IPC1-7):G03F7/16;H01L29/786 主分类号 H01L21/336
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