发明名称 |
THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND MANUFACTURING METHOD FOR DISPLAY DEVICE |
摘要 |
<p>The present invention provides a thin film transistor that can be manufactured at lower cost and at higher yield by simplifying a manufacturing process, a manufacturing method thereof, and a manufacturing method of a display device using the thin film transistor. According to this invention, a pattern used in a pattering process is formed by using a droplet discharging method. The pattern is formed by selectively discharging a composition comprising an organic resin. By using the pattern, an electrically conductive material, an insulator or semiconductor constituting a semiconductor element, are patterned into a desired shape by a simple process.</p> |
申请公布号 |
WO2005022262(A1) |
申请公布日期 |
2005.03.10 |
申请号 |
WO2004JP12598 |
申请日期 |
2004.08.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;MAEKAWA, SHINJI;FUKUCHI, KUNIHIKO;FUJII, GEN;MURANAKA, KOJI;NAKAMURA, OSAMU |
发明人 |
MAEKAWA, SHINJI;FUKUCHI, KUNIHIKO;FUJII, GEN;MURANAKA, KOJI;NAKAMURA, OSAMU |
分类号 |
H01L21/336;H01L21/77;H01L27/12;(IPC1-7):G03F7/16;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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