| 摘要 |
<p>A method for forming one or more thin films on a substrate by vacuum-evaporating two or more materials, wherein the relationship between the position on the substrate and the film thicknesses with respect to material i is approximated by the following formula (1): Di/D0i α (L0/Li)?3cosniυ¿i... (where L0 is the vertical distance from the evaporation source to the surface of the substrate, D0i is the film thickness of the material i at the intersection of a perpendicular from the evaporation source to the surface and the surface of the substrate, and Di is the film thickness of the material i at the point where the angle of radiation from the perpendicular from the evaporation source to the surface of the substrate is υi and the distance from the evaporation source is Li). The ni of each material of the above relationship is so controlled as to lie in the range of k ± 0.5 (where k is a constant from 2 to 5), and therefore a homogeneou device thin-film can be formed even on a large-screen substrate.</p> |
