| 摘要 |
PROBLEM TO BE SOLVED: To reduce a leak current controlling the substrate potential or source potential of a MOS transistor, and keeping the high speed of a semiconductor integrated circuit. SOLUTION: The semiconductor integrated circuit is provided with a logic circuit 18 including a control object of the MOS transistor which is a object of the substrate potential or source potential of the MOS transistor, a substrate potential control circuit 13 which changes the substrate potential of the control object of the MOS transistor, a source potential control circuit 16 which changes the source potential of the control object of the MOS transistor, a substrate potential control signal generation circuit 12 which generates a substrate potential control signal 14 for controlling the substrate potential control circuit 13 from an internal circuit of the logic circuit, and a source potential control signal generation circuit 15 which generates a source potential control signal 17 for controlling the source potential control circuit 16 from an internal signal of the logic circuit, controls the substrate potential control circuit 13 based on the substrate potential control signal 14, and controls the source potential control circuit 16 based on the source potential control signal 17. COPYRIGHT: (C)2005,JPO&NCIPI
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