发明名称 Semiconductor storage device which includes a hydrogen diffusion inhibiting layer
摘要 The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively acts as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
申请公布号 US2005051821(A1) 申请公布日期 2005.03.10
申请号 US20040920344 申请日期 2004.08.18
申请人 MIKI HIROSHI;KUSHIDA KEIKO;SHIMAMOTO YASUHIRO;TAKATANI SHINICHIRO;FUJISAKI YOSHIHISA;NAKAI HIROMI 发明人 MIKI HIROSHI;KUSHIDA KEIKO;SHIMAMOTO YASUHIRO;TAKATANI SHINICHIRO;FUJISAKI YOSHIHISA;NAKAI HIROMI
分类号 H01L21/02;(IPC1-7):H01L29/76 主分类号 H01L21/02
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