Lithographic patterning using a high transmission attenuated phase-shift mask and multiple exposures of optimised coherence,申请号EP20020255777-传众专利搜索

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发明名称	Lithographic patterning using a high transmission attenuated phase-shift mask and multiple exposures of optimised coherence
摘要
申请公布号	EP1286218(A3)	申请公布日期	2005.03.09
申请号	EP20020255777	申请日期	2002.08.20
申请人	ASML MASKTOOLS B.V.	发明人	HSU, CHUNGWEI;HSU, STEPHEN;LAIDIG, THOMAS;VAN DEN BROEKE, DOUGLAS;CHEN, JANG FUNG
分类号	G03F1/00;G03F7/20;H01L21/027;(IPC1-7):G03F1/00	主分类号	G03F1/00
代理机构		代理人
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