发明名称 SEMICONDUCTOR PHOTOELECTRIC SURFACE AND ITS MANUFACTURING METHOD, AND PHOTODETECTING TUBE USING SEMICONDUCTOR PHOTOELECTRIC SURFACE
摘要 <p>A semiconductor photocathode of the present invention is provided with: a support substrate 10; a photoelectric surface 30 which is formed of a plurality of semiconductor layers layered on this support substrate 10 and which emits photoelectrons from a photoelectron emitting surface 341 in response to the incidence of light to be detected; and a metal electrode 35 which is formed in film form so as to coat at least a portion of support substrate 10 and a portion of photoelectric surface 30 and which makes ohmic contact with the photoelectric surface, wherein metal electrode 30 in film form includes titanium and the electron affinity of photoelectron emitting surface 341, which is an exposed portion of photoelectric surface 30 without being coated with metal electrode 35 in film form, is in a negative condition. &lt;IMAGE&gt;</p>
申请公布号 EP1513185(A1) 申请公布日期 2005.03.09
申请号 EP20030730551 申请日期 2003.05.21
申请人 HAMAMATSU PHOTONICS K.K. 发明人 KOHNO, YASUYUKI,;NAGAI, TOSHIMITSU,;HASEGAWA, YUTAKA,
分类号 H01J43/08;H01J1/34;H01J9/12;H01J40/06;(IPC1-7):H01J40/06;H01J7/18 主分类号 H01J43/08
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