TFT WITH LDD STRUCTURE CAPABLE OF ENHANCING ELECTRICAL PROPERTIES AND FLAT DISPLAY USING THE SAME

摘要

PURPOSE: A TFT(Thin Film Transistor) and a flat display using the same are provided to improve electrical properties by using an LDD(Lightly Doped Drain) region with a predetermined angle range between a primary grain boundary and a current flow direction. CONSTITUTION: A TFT includes an LDD region(II). Within the LDD region, the angle between a primary grain boundary and a current flow direction is in the range of -30 to 30 degrees.