发明名称 |
High density and high programming efficiency MRAM design |
摘要 |
A method and system for providing a magnetic memory is disclosed. The magnetic memory includes a magnetic element. The magnetic element is written using a first write line and a second write line and resides at an intersection between the first and second write lines. The second write line is oriented at an angle to the first write line. The second write line has a top and at least one side. At least a portion of the second write line is covered by an insulating layer. A magnetic layer covers a portion of the insulating layer. The portion of the insulating layer resides between the magnetic layer and the second write line. The magnetic layer includes a soft magnetic material.
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申请公布号 |
US6864551(B2) |
申请公布日期 |
2005.03.08 |
申请号 |
US20030606612 |
申请日期 |
2003.06.26 |
申请人 |
APPLIED SPINTRONICS TECHNOLOGY, INC. |
发明人 |
TSANG DAVID |
分类号 |
G11C;H01L21/8246;H01L27/22;H01L29/82;H01L31/062;H01L43/00;(IPC1-7):H01L29/82 |
主分类号 |
G11C |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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