| 摘要 |
Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1-xN (0<=x<=1.0). In this device, the component ratio "x" of Al is specified at a value in a range of 0.3<=x<=1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio "x" of Al is specified at a value in a range of 0.15<x<0.30, so that the semiconductor laser light emitting device is configured as a weak index type pulsation semiconductor laser light emitting device; or the component ratio "x" of Al is specified at a value in a range of 0<=x<=0.15, so that the semiconductor laser light emitting device is configured as a gain guide type laser light emitting device.
|
