METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO MAXIMUMLY CONTROL ION IMPLANTATION DAMAGE TO LOWER STRUCTURE OR SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to maximumly control ion implantation damage to a lower structure or a semiconductor substrate by forming a buffer layer before high density impurities having a great mass are implanted. CONSTITUTION: A semiconductor substrate(301) is prepared which has various elements including a junction region for forming a semiconductor device. A buffer layer(304) for avoiding ion implantation damage is formed on the resultant structure. Impurities are implanted into a predetermined region of the semiconductor substrate. A material on the semiconductor substrate is eliminated, having a different thermal expansion coefficient than that of the semiconductor substrate. A heat treatment process is performed to activate the impurities.