| 摘要 |
The invention concerns a tunable edge-emitting semiconductor laser (10) including a resonant cavity delimited by two reflectors (15, 20), one of which is a fixed reflector (15) and the other of which is a mobile reflector (20), and including an active section (1) with gain of length L1 and a tunable section (2) of length L2, characterized in that the total length of the cavity L=L1+L2 is less than or equal to 20 mum.
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