| 发明名称 |
Method of stabilizing resist material through ion implantation |
| 摘要 |
A resist material used to mask an underlying layer during an etch process is subjected to ion implantation to harden the resist material against damage from the etch process. In a particular embodiment, the resist material is compatible with exposure to 193 nm radiation for patterning the resist material.
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| 申请公布号 |
US6864144(B2) |
申请公布日期 |
2005.03.08 |
| 申请号 |
US20020158980 |
申请日期 |
2002.05.30 |
| 申请人 |
INTEL CORPORATION |
发明人 |
KENYON CHRISTOPHER;FAHY MICHAEL R.;ZIETZ GERARD T. |
| 分类号 |
G03F7/40;H01L21/027;H01L21/308;H01L21/311;(IPC1-7):H01L21/336 |
主分类号 |
G03F7/40 |
| 代理机构 |
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