发明名称 Boosting circuit in semiconductor memory device
摘要 The Disclosed is a boosting circuit. A boosting voltage (VBOOT) is rapidly increased to a given voltage level in two steps by using a preboosting circuit unit and a bootstrap circuit unit. The boosting voltage (VBOOT) is dropped through a clamp circuit unit to generate a final target voltage. Therefore, it is possible to make fast read access time in a read operation, minimize consumption of current and generate a stabilized word line voltage (W/L).
申请公布号 US6865118(B2) 申请公布日期 2005.03.08
申请号 US20030739249 申请日期 2003.12.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON YI JIN
分类号 G11C5/14;G11C8/08;(IPC1-7):G11C7/00 主分类号 G11C5/14
代理机构 代理人
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