TRANSPARENT THIN FILM ELECTRODE FOR FORMING OHMIC CONTACT OF P-TYPE SEMICONDUCTOR INCLUDING GALLIUM FOR EMBODYING HIGH-QUALITY LED AND LASER DIODE TO IMPROVE YIELD OF DEVICE

摘要

PURPOSE: A transparent thin film electrode for forming an ohmic contact of a p-type semiconductor including gallium for embodying a high-quality LED(light emitting diode) and a laser diode is provided to improve yield of a device by making a p-type semiconductor have a good surface state when an ohmic contact is formed on the surface of the p-type semiconductor. CONSTITUTION: A transparent thin film electrode for a p-type semiconductor LED including a laser diode has at least nitrogen and gallium. The transparent thin film electrode includes a copper-based alloy(including a solid solution) layer and a metal capping layer formed on the alloy layer.