发明名称 PROCEDE D'AJUSTAGE D'UN PARAMETRE ELECTRIQUE SUR UN COMPOSANT ELECTRONIQUE INTEGRE
摘要 <p>A method is provided for manufacturing an integrated electronic component arranged on a substrate wafer. According to the method, at least one metallization step is performed, and a value of an electrical parameter of the integrated electronic component is determined after the at least one metallization step. A subsequent metallization step is performed after determining the value of the electrical parameter. The subsequent metallization step is performed using an adjustment mask chosen from n predefined masks based on a desired value of the electrical parameter, so as to obtain the desired value of the electrical parameter of the integrated electronic component after manufacturing. In one preferred embodiment, a series of electrical tests is performed on the wafer using test equipment, and the value of the electrical parameter is determined using the same test equipment as is used to perform the series of electrical tests.</p>
申请公布号 FR2806529(B1) 申请公布日期 2005.03.04
申请号 FR20000003260 申请日期 2000.03.14
申请人 STMICROELECTRONICS SA 发明人 DELL OVA FRANCIS;RIZZO PIERRE;LHERMET FRANK;POIROT DOMINIQUE;RAYON STEPHANE;GOMEZ BERTRAND;LESSOILE NICOLE
分类号 H01L21/66;H01L23/66;(IPC1-7):H01L21/66;H01L21/283;H05K13/00 主分类号 H01L21/66
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