| 摘要 |
PURPOSE: A method for forming SIC film on BN film by CVD(Chemical Vapor Deposition) is provided to prevent a rapid drop in high temperature(700°C or more) by using MTS(Methyltrichlorosilane), SiH4:C2HCl3, SiH2:Cl2:C2H2 and SiH6:C2H2 as main reaction materials. CONSTITUTION: A method for forming SIC film on BN film CVD is utilized in the field using BN film as BN film heater or BN film ES-chuck etc. SIC film is formed at the temperature of 1000 to 2300°C under the pressure of 0.1 to 600 torr by using MTS(Methyltrichlorosilane), SiH4:C2HCl3, SiH2:Cl2:C2H2 and SiH6:C2H2 as main reaction materials, and hydrogen gas(H2), helium gas and argon gas(Ar) as carrier gas.
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