METHOD FOR REDUCING PATTERN DEFORMATION AND PHOTORESIST POISONING IN SEMICONDUCTOR DEVICE FABRICATION,申请号KR20057000968-传众专利搜索

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发明名称	METHOD FOR REDUCING PATTERN DEFORMATION AND PHOTORESIST POISONING IN SEMICONDUCTOR DEVICE FABRICATION
摘要
申请公布号	KR20050019905(A)	申请公布日期	2005.03.03
申请号	KR20057000968	申请日期	2003.07.29
申请人		发明人
分类号	H01L21/033;H01L21/28;H01L21/3065;H01L21/3213;H01L21/335;H01L29/78;(IPC1-7):H01L21/033	主分类号	H01L21/033
代理机构		代理人
主权项
地址

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