| 摘要 |
PROBLEM TO BE SOLVED: To acquire a drain current of a p-type MIS transistor and to decrease a leakage current of a gate insulating film of an n-type MIS transistor. SOLUTION: An identical chip has the n-type MIS transistor and the p-type MIS transistor. And the thickness of the gate insulating film of the n-type MIS transistor is thicker than that of the p-type MIS transistor. When the chip has a silicon oxide film as the gate insulating film and a high dielectric constant film formed on the silicon oxide film, the thickness of the silicon oxide film of the n-type MIS transistor is thicker than that of the p-type MIS transistor. COPYRIGHT: (C)2005,JPO&NCIPI
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