METHOD AND APPARATUS FOR MEASURING THICKNESS OF MULTI-LAYERS MEASURING DIRECTLY PATTERNED WAFER IN NON-CONTACT MANNER

摘要

PURPOSE: A method and an apparatus for measuring the thickness of multi-layers are provided to obtain the reliability by measuring directly a patterned wafer in a non-contact manner without using a monitoring wafer. CONSTITUTION: A measured spectrum that analyzed a light reflected from the wafer is stored(S12). Recipes suitable for a plurality of estimated stack structures are respectively stored(S14). A theoretical spectrum is calculated according to the thickness of the multi-layers(S16). A temporary thickness of the multi-layer is output by comparing the analyzed spectrum with the theoretical spectrum(S18). The GOF(Goodness Of Fit) of the output temporary thickness is calculated(S20). If the GOF standard is not satisfied, the measurement of the temporary thickness with respect to another recipe is repeated(S22). The temporary thickness satisfying the GOF standard is output as the thickness of the multi-layers(S24).