发明名称 |
LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS AND DEVICES SO FORMED |
摘要 |
A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoidin g annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat. |
申请公布号 |
CA2535723(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
CA20042535723 |
申请日期 |
2004.08.12 |
申请人 |
CREE, INC. |
发明人 |
DONOFRIO, MATTHEW;EDMOND, JOHN A.;SLATER, DAVID B., JR. |
分类号 |
H01L21/28;H01L21/027;H01L21/04;H01L21/263;H01L21/268;H01L21/60;H01L33/00;H01L33/34;H01L33/40 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|