发明名称 Semiconductor integrated circuit incorporating logic gates and with protection against reverse engineering using transistors without supplementary treatment circuits
摘要 <p>Semiconductor integrated circuit comprises: (a) a logic gate and a part for protection against reverse engineering that modifies the apparent Boolean functions of the logic gate, this protective part incorporating at least one PMOS transistor (P11) that remains in a state of constant unblocking or blocking independently of an input signal (A) applied to its grid; (b) at least one NMOS transistor (N11) that remains in a state of constant unblocking or blocking independently of an input signal applied to its grid; (c) the PMOS and NMOS transistors are included in the transistors forming the logic gate. An independent claim is also included for the protection against reverse engineering of an integrated circuit incorporating several logic gates.</p>
申请公布号 DE102004036898(A1) 申请公布日期 2005.03.03
申请号 DE20041036898 申请日期 2004.07.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JONG-CHEOL
分类号 H01L27/10;G06F21/75;H01L23/58;H01L27/02;H01L27/092;H03K19/00;(IPC1-7):H01L27/092 主分类号 H01L27/10
代理机构 代理人
主权项
地址