发明名称 Semiconductor component with high frequency (HF) circuit with active circuit components integrated in first semiconductor chip, while at least part of passive circuit components are formed in second semiconductor chip by silicon processing
摘要 <p>In at least one first semiconductor chip (1) is integrated electronic circuit with active components (A) of HF circuit. At least one second chip (2) and/or flexible support contains passive components (P) of HF circuit. Both chips etc. are fitted, on respective surface, with connecting contact pads (3), with both chips etc. permanently interconnected. Tap sides with contact pads are conductively coupled by face-to-face technology so that electronic circuit and passive circuit components form HF circuit.</p>
申请公布号 DE10361014(A1) 申请公布日期 2005.03.03
申请号 DE2003161014 申请日期 2003.12.23
申请人 INFINEON TECHNOLOGIES AG 发明人 FENK, JOSEF
分类号 H01L23/66;H01L25/16;H03B1/00;H03B5/12;H03F3/193;(IPC1-7):H01L25/04;H03J1/00;H03J3/02;H03B5/08 主分类号 H01L23/66
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