发明名称 |
Electrode structure for electronic and opto-electronic devices |
摘要 |
The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.
|
申请公布号 |
US2005045873(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20040499538 |
申请日期 |
2004.06.21 |
申请人 |
ALVARADO SANTOS F.;BEIERLEIN TILMAN A.;CORNE BRIAN K.;DRECHSLER UTE;GERMANN ROLAND;KARG SIEGFRIED F.;MUELLER PETER;RIEL IIEIKE;RIESS WALTER;RUHSTALLER BEAT;SEIDLER PAUL;WIDMER ROLAND |
发明人 |
ALVARADO SANTOS F.;BEIERLEIN TILMAN A.;CORNE BRIAN K.;DRECHSLER UTE;GERMANN ROLAND;KARG SIEGFRIED F.;MUELLER PETER;RIEL IIEIKE;RIESS WALTER;RUHSTALLER BEAT;SEIDLER PAUL;WIDMER ROLAND |
分类号 |
H01L51/50;H01L51/52;H05B33/10;H05B33/22;(IPC1-7):H01L35/24 |
主分类号 |
H01L51/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|