METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE SIMPLIFYING PROCESS USING BARRIER METAL OF VIA PROCESS

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to simplify a process by using a barrier metal of via process without an additional process depositing an upper layer of MIM(Metal Insulator Metal) capacitor. CONSTITUTION: A metal layer to be used as a lower electrode of a MIM capacitor is deposited and is patterned as the lower electrode. A interlayer dielectric material is deposited on the lower electrode. A contact via and a via to be used in the MIM capacitor are simultaneously dry-etched by using a mask after coating a photoresist. A barrier metal is deposited on an area of the contact via and a MIM capacitor via. A dielectric film is deposited. Only the dielectric film of the MIM capacitor area is remained by patterning and etching. The vias are buried by depositing tungsten on the area of the contact via and the MIM capacitor via. The highest level metal layer(19) is formed by depositing and patterning the metal layer.