| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition and techniques for processing a semiconductor device, more particularly, to provide an antireflective hardmask composition in one aspect of the invention and to provide a method for processing a semiconductor device in another aspect. <P>SOLUTION: The composition contains a fully condensed polyhedral oligosilsesquioxane, äRSiO<SB>1.5</SB>}<SB>n</SB>, wherein n equals 8; and at least one chromophore moiety and transparent moiety. The method comprises steps of: providing a material layer on a substrate; and forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, äRSiO<SB>1.5</SB>}<SB>n</SB>, wherein n equals 8; and at least one chromophore moiety and transparent moiety. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
